TSMC’s 2nm fab plan starts

TSMC's 2nm fab plan starts. The details of the online meeting were reported by Taiwan Commercial Daily. The second phase of the Hsinchu Science Park Baoshan Land Expansion Project is considering providing environmental impact and mitigation activities for the Baoshan expansion to expand TSMC’s 2nm manufacturing capacity.

TSMC’s 2nm fab plan starts

Taiwan’s Ministry of Science and Technology discussed environmental issues surrounding the expansion of TSMC’s Hsinchu business to accommodate 2 nanometer fabs.

The details of the online meeting were reported by Taiwan Commercial Daily. The second phase of the Hsinchu Science Park Baoshan Land Expansion Project is considering providing environmental impact and mitigation activities for the Baoshan expansion to expand TSMC’s 2nm manufacturing capacity. Baoshan Phase II has a total area of ​​90.02 hectares. Construction is expected to start after the land acquisition is completed, and the estimated total construction period is 60 months.

The meeting focused on the environmental impact assessment, reclaimed water reuse and protection of the Keya River restoration area. TSMC will start risky production of 3nm technology next year, and mass production in 2023, and has not yet commented on the timetable for 2nm technology that requires different types of transistors and new materials.

Written by

Swasti Pujari

Associate Director, Backend Engineering at CoreIC Technologies, with 15+ years in VLSI Physical Design and backend engineering. Previously Practice Head at UST Global, leading Physical Design, STA, EMIR, DFT, and Physical Verification. Delivered 3nm, 6nm and 7nm projects for AMD, Intel, and Microchip, and published IEEE research on hybrid AI-EDA floorplanning.